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| 2SK1773 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 1000 30 5 15 5 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1773 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1000 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 800 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A VGS = 10 V * ID = 3 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 10 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 1.5 10 250 3.0 2.0 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3.2 5.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1700 700 315 25 110 210 135 0.85 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 1050 -- ns -------------------------------------------------------------------------------------- 2SK1773 Power vs. Temperature Derating 160 Maximum Safe Operation Area 50 30 Operationm in this area is limited by RDS (on) 10 Pch (W) Drain Current I D (A) 120 10 PW = 1 10 s 0 s D C m Channel Dissipation 3 1 10 m s s pe O ra (1 tio 80 n (T c = sh ot ) 25 C ) 40 0.3 0.1 0.05 10 Ta = 25C 0 50 100 Case Temperature 150 Tc (C) 200 30 100 300 1000 3000 DS (V) 10000 Drain to Source Voltage V Typical Output Characteristics 10 10 V 8 Pulse Test Drain Current I D (A) 6 Drain Current I D (A) 8V 5.5 V 4 5 Typical Transfer Characteristics VDS = 10 V Pulse Test 5V 3 4 4V 2 V GS = 3.5 V 0 10 20 30 40 50 2 Tc = 75C 25C 1 -25C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 2SK1773 Drain-Source Saturation Voltage vs. Gate-Source Voltage 20 Pulse Test Static Drain-Source on State Resistance R DS (on) ( ) 16 20 10 5 50 Static Drain-Source on State Resistance vs. Current Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 12 5A 8 2 1 0.5 0.2 V GS = 10 V 4 2A ID = 1 A 4 8 12 16 20 0 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain-Source on State Resistance vs. Temperature 10 10 5 Forward Transfer Admittance |y fs| (S) Forward Transfer Admittance vs. Drain Current Static Drain-Source on State Resistance R DS (on) ( ) 8 Pulse Test VGS = 10 V Tc = - 25C 2 1 0.5 25C 75C 6 4 ID = 5 A 2 2A 1A 0.2 0.1 0.05 V DS = 10 V Pulse Test 0.1 0.2 0.5 1 2 5 0 -40 0 40 80 120 160 Case Temperature T C (C) Drain Current I D (A) 2SK1773 Body-Drain Diode Reverse Recovery Time 5000 10000 Typical Capacitance vs. DrainSource Voltage Reverse Recovery Time trr (ns) 2000 Capacitance C (pf) 1000 1000 Ciss 500 di / dt = 100 A / s VGS = 0, Ta =25C Coss 100 Crss 200 100 50 0.1 VGS = 0 f = 1 MHz 10 0 0.2 0.5 1 2 5 10 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 20 500 Switching Characteristics td (off) Drain to Source Voltage VDS (V) V GS VDS V DD = 250 V 400 V ID= 5 A 12 Gate to Source Voltage VGS (V) 800 16 200 Switing Time t (ns) tf 100 tr 50 td (on) 20 10 . V GS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% 600 400 600 V V DD = 600 V 400 V 250 V 0 40 80 120 160 8 200 4 0 200 5 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 2SK1773 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test 8 Reverse Drain Current I DR (A) 6 4 VGS = 10 V 2 0, - 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 1s hot Pul se Tc = 25C 1.0 ch - c(t) = s(t) . ch - c ch - c = 1.25C / W, Tc = 25C PW D= T P DM T 1m 10 m Pulse Width PW (S) 100 m PW 0.01 100 1 10 2SK1773 Switching Time Test Circuit Vin Monitor Waveforms 90 % Vout Monitor D.U.T RL Vout Vin 10 V 50 10 % 10 % Vin 10 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf |
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